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| AP4511GH Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Good Thermal Performance Fast Switching Performance S1 G1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 35V 30m 15A -35V 48m -12A S2 G2 Description TO-252-4L The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 20 15 9 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -35 20 -12 -7 -50 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case 3 3 Value Max. Max. 12 110 Units /W /W Thermal Resistance Junction-ambient Data and specifications subject to change without notice 200222053 AP4511GH N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 13 11 3 6 12 7 22 6 830 150 110 1.1 Max. Units 30 40 3 1 25 100 18 1330 1.7 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance 2 VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=10V, ID=8A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=35V, VGS=0V VDS=28V, VGS=0V VGS=20V ID=8A VDS=28V VGS=4.5V VDS=18V ID=1A RG=3.3,VGS=10V RD=18 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=8A, VGS=0V IS=8A, VGS=0V dI/dt=100A/s Min. - Typ. 18 12 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP4511GH P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.03 10 10 2 6 10 6 26 7 690 165 130 5 Max. Units 48 70 -3 -1 -25 100 19 1100 7.5 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-35V, VGS=0V VDS=-28V, VGS=0V VGS=20V ID=-6A VDS=-28V VGS=-4.5V VDS=-18V ID=-1A RG=3.3,VGS=-10V RD=18 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-6A, VGS=0V IS=-6A, VGS=0V dI/dt=-100A/s Min. - Typ. 20 12 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . AP4511GH N-Channel 50 50 T C = 25 o C 40 ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V T C = 150 o C 40 10V 7.0V 30 30 5.0V 4.5V 20 20 4.5V 10 V G =3.0V 10 V G =3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.6 ID=6A 40 T C =25 o C Normalized RDS(ON) 1.4 ID=8A V G =10V RDS(ON) (m ) 35 1.2 30 1.0 25 0.8 20 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 6 Normalized VGS(th) (V) 4 1.1 IS(A) T j =150 C o T j =25 C o 2 0.8 0 0 0.2 0.4 0.6 0.8 1 1.2 0.5 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4511GH N-Channel f=1.0MHz 14 1000 C iss 12 VGS , Gate to Source Voltage (V) ID=8A V DS = 28V 10 C (pF) 8 C oss 100 C rss 6 4 2 0 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 10 0.2 ID (A) 0.1 0.1 0.05 1ms 1 PDM 0.02 t T Single Pulse T C =25 C Single Pulse 0.1 0.1 1 10 o 10ms 100ms DC 100 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS =5V 30 VG QG 4.5V QGS QGD ID , Drain Current (A) T j =25 o C T j =150 o C 20 10 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP4511GH P-Channel 50 50 T C = 25 C 40 o -10V -7.0V 40 T C = 150 C -ID , Drain Current (A) o -10V -7.0V -ID , Drain Current (A) -5.0V 30 -4.5V 30 -5.0V -4.5V 20 20 V G = - 3.0V 10 10 V G = - 3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 90 1.6 ID=-4A 70 1.4 Normalized R DS(ON) T C =25 o C RDS(ON) (m ) I D = -6 A V G = - 10V 1.2 1.0 50 0.8 30 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 6 5 Normalized -VGS(th) (V) 4 1.2 -IS(A) T j =150 o C 3 T j =25 o C 2 0.8 1 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4511GH P-Channel f=1.0MHz 16 1000 -VGS , Gate to Source Voltage (V) I D = -6 A V DS = - 28V 12 C iss 8 4 C (pF) C oss C rss 0 0 5 10 15 20 25 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 10 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 -ID (A) 0.1 0.1 0.05 1ms 1 PDM 0.02 t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC T C =25 o C Single Pulse 10ms 100ms DC 10 100 0.01 Single Pulse 0.1 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =-5V -ID , Drain Current (A) T j =25 o C T j =150 o C VG QG -4.5V QGS QGD 20 10 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform |
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